IGBT - IXGH30N60B2 HIPERFAST IGBT 600V 70A 82NS

Brand: GERMANY

Group: Semiconductor

Subgroup: IGBT

Model / Brand: IXYS

Stock: Please Call.

قیمت: 300,000 Tomman

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Keywords: IXGH30N60B2

 

 

Detail:

Maximum power dissipation (Pc) of IGBT transistor, W: Maximum collector-emitter voltage |Uce|, V: 600V Collector-emitter saturation voltage |Ucesat|, V: 1.8V Maximum gate-emitter voltage |Ueg|, V: Maximum collector current |Ic|, A: 70A Maximum junction temperature (Tj), °C: Rise time, nS: 82 Maximum collector capacity (Cc), pF: Package: TO247